Vertical and lateral drift corrections of scanning probe microscopy images
نویسندگان
چکیده
منابع مشابه
Scanning hall probe microscopy technique for investigation of magnetic properties
Scanning Hall Probe Microscopy (SHPM) is a scanning probe microscopy technique developed to observe and image magnetic fields locally. This method is based on application of the Hall Effect, supplied by a micro hall probe attached to the end of cantilever as a sensor. SHPM provides direct quantitative information on the magnetic state of a material and can also image magnetic induction under a...
متن کاملMethods for vertical drift measurements of scanning probe microscopes.
Time stability plays an important role in the applications of scanning probe microscopes (SPMs). Although SPMs integrated with a closed-loop control system could reduce the drift greatly, drift would still exist. The SPM drift in the lateral direction has been well studied, and several measurement methods have also been developed. However, due to coupling of the lateral drift, it is still diffi...
متن کاملScanning hall probe microscopy technique for investigation of magnetic properties
Scanning Hall Probe Microscopy (SHPM) is a scanning probe microscopy technique developed to observe and image magnetic fields locally. This method is based on application of the Hall Effect, supplied by a micro hall probe attached to the end of cantilever as a sensor. SHPM provides direct quantitative information on the magnetic state of a material and can also image magnetic induction under a...
متن کاملScanning probe microscopy.
During the past year, scanning probe microscopy, especially atomic force microscopy (AFM), has taken root in the biological sciences community, as is evident from the large number of publications and from the variety of specialized journals in which these papers appear. Furthermore, there is a strong indication that the technique is evolving from a qualitative imaging tool to a probe of the cri...
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ژورنال
عنوان ژورنال: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
سال: 2010
ISSN: 2166-2746,2166-2754
DOI: 10.1116/1.3360909